Marleen Van Hove: search on Z-Library

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1

Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200 mm Si substrates

Ronchi, Nicolò, De Jaeger, Brice, Van Hove, Marleen, Roelofs, Robin, Wu, Tian-Li, Hu, Jie, Kang, Xuanwu, Decoutere, Stefaan

Journal:

Japanese Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 1.41 MB

english, 2015

2

[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate

Wu, Tian-Li, Marcon, Denis, De Jaeger, Brice, Van Hove, Marleen, Bakeroot, Benoit, Lin, Dennis, Stoffels, Steve, Kang, Xuanwu, Roelofs, Robin, Groeseneken, Guido, Decoutere, Stefaan

Year:

2015

Language:

english

File:

PDF, 620 KB

english, 2015

3

Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate

Hu, Jie, Stoffels, Steve, Lenci, Silvia, Bakeroot, Benoit, De Jaeger, Brice, Van Hove, Marleen, Ronchi, Nicolo, Venegas, Rafael, Liang, Hu, Zhao, Ming, Groeseneken, Guido, Decoutere, Stefaan

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 5.23 MB

english, 2016

4

S-parameter measurement based quasistatic large-signal cold HEMT model for resistive mixer design

Dominique M. M.-P. Schreurs, Yves Baeyens, Bart K. J. C. Nauwelaers, Walter De Raedt, Marleen Van Hove, Marc Van Rossum

Journal:

International Journal of RF and Microwave Computer-Aided Engineering

Year:

1996

Language:

english

File:

PDF, 676 KB

english, 1996

5

[IEEE 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Kanazawa (2013.5.26-2013.5.30)] 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - New source-side breakdown mechanism in AlGaN/GaN insulated-gate HEMTs

Bahl, Sandeep R., Van Hove, Marleen, Xuanwu Kang,, Marcon, Denis, Zahid, Mohammed, Decoutere, Stefaan

Year:

2013

Language:

english

File:

PDF, 1015 KB

english, 2013

6

Trapping and Reliability Assessment in D-Mode GaN-Based MIS-HEMTs for Power Applications

Meneghini, Matteo, Bisi, Davide, Marcon, Denis, Stoffels, Steve, Van Hove, Marleen, Wu, Tian-Li, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico

Journal:

IEEE Transactions on Power Electronics

Year:

2014

Language:

english

File:

PDF, 823 KB

english, 2014

7

Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress

Wu, Tian-Li, Marcon, Denis, Stoffels, Steve, You, Shuzhen, De Jaeger, Brice, Van Hove, Marleen, Groeseneken, Guido, Decoutere, Stefaan

Journal:

Microelectronics Reliability

Year:

2014

Language:

english

File:

PDF, 1.40 MB

english, 2014

8

MOCVD growth of DH-HEMT buffers with low-temperature AlN interlayer on 200 mm Si (111) substrate for breakdown voltage enhancement

Zhao, Ming, Liang, Hu, Kandaswamy, Prem Kumar, Van Hove, Marleen, Venegas, Rafael, Vranken, Evi, Favia, Paola, Vanderheyden, Annelies, Vanhaeren, Danielle, Saripalli, Yoga Nrusimha, Decoutere, Stefaan

Journal:

Physica status solidi

Year:

2016

Language:

english

File:

PDF, 757 KB

english, 2016

9

SPIE Proceedings [SPIE Microelectronic and MEMS Technologies - Edinburgh, United Kingdom (Wednesday 30 May 2001)] Lithography for Semiconductor Manufacturing II - Lithography aspects of dual-damascene interconnect technology

Maenhoudt, Mireille, Van Goidsenhoven, Diziana, Pollentier, Ivan K., Ronse, Kurt G., Lepage, Muriel, Struyf, Herbert, Van Hove, Marleen, Mack, Chris A., Stevenson, Tom

Year:

2001

Language:

english

File:

PDF, 1.09 MB

english, 2001

10

Forward Bias Gate Breakdown Mechanism in Enhancement-mode p-GaN gate AlGaN/GaN High-electron-mobility Transistors (HEMTs)

Wu, Tian-Li, Marcon, Denis, You, Shuzhen, Posthuma, Niels E., Bakeroot, Benoit, Stoffels, Steve, Van Hove, Marleen, Groeseneken, Guido, Decoutere, Stefaan

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 410 KB

english, 2015

11

Negative bias-induced threshold voltage instability (NBTI) in GaN-on-Si power HEMTs

Meneghini, Matteo, Rossetto, Isabella, Ruzzarin, Maria, Bisi, Davide, Van Hove, Marleen, Stoffels, Steve, Wu, Tian-Li, Marcon, Denis, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 670 KB

english, 2016

12

Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress

Ruzzarin, Maria, Meneghini, Matteo, Rossetto, Isabella, Van Hove, Marleen, Stoffels, Steve, Wu, Tian-Li, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 618 KB

english, 2016

13

Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs

Borga, Matteo, Meneghini, Matteo, Stoffels, Steve, Li, Xiangdong, Posthuma, Niels, Van Hove, Marleen, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.84 MB

english, 2018

14

[IEEE 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Waikoloa, HI, USA (2014.6.15-2014.6.19)] 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Improvement of the dynamic characteristics of Au-free AlGaN/GaN Schottky Diodes on 200 mm Si wafers by surface treatments

Lenci, Silvia, Hu, Jie, Van Hove, Marleen, Ronchi, Nicolo', Decoutere, Stefaan

Year:

2014

Language:

english

File:

PDF, 703 KB

english, 2014

15

Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With ${\rm Al}_{2}{\rm O}_{3}$ and ${\rm Si}_{3}{\rm N}_{4}/{\rm Al}_{2}{\rm O}_{3}$ Gate Dielectrics

Van Hove, Marleen, Kang, Xuanwu, Stoffels, Steve, Wellekens, Dirk, Ronchi, Nicolo, Venegas, Rafael, Geens, Karen, Decoutere, Stefaan

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 2.92 MB

english, 2013

16

Impact of crystal orientation on ohmic contact resistance of enhancement-mode p-GaN gate high electron mobility transistors on 200 mm silicon substrates

Van Hove, Marleen, Posthuma, Niels, Geens, Karen, Wellekens, Dirk, Li, Xiangdong, Decoutere, Stefaan

Journal:

Japanese Journal of Applied Physics

Year:

2018

Language:

english

File:

PDF, 945 KB

english, 2018

17

Gate Stability of GaN-Based HEMTs with P-Type Gate

Meneghini, Matteo, Rossetto, Isabella, Rizzato, Vanessa, Stoffels, Steve, Van Hove, Marleen, Posthuma, Niels, Wu, Tian-Li, Marcon, Denis, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico

Journal:

Year:

2016

Language:

english

File:

PDF, 2.23 MB

english, 2016

18

Detection of Copper and Water in Low-k Dielectrics by Triangular Voltage Sweep Measurements

Ciofi, Ivan, Tökei, Zsolt, Saglimbeni, Marco, Van Hove, Marleen

Journal:

MRS Proceedings

Year:

2006

Language:

english

File:

PDF, 115 KB

english, 2006

19

Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs

Bisi, Davide, Meneghini, Matteo, Marino, Fabio Alessio, Marcon, Denis, Stoffels, Steve, Van Hove, Marleen, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico

Journal:

IEEE Electron Device Letters

Year:

2014

Language:

english

File:

PDF, 1.23 MB

english, 2014

20

[IEEE ESSDERC 2012 - 42nd European Solid State Device Research Conference - Bordeaux, France (2012.09.17-2012.09.21)] 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC) - High temperature behaviour of GaN-on-Si high power MISHEMT devices

Wellekens, Dirk, Venegas, Rafael, Kang, Xuanwu, Zahid, Mohammed, Wu, Tian-Li, Marcon, Denis, Srivastava, Puneet, Van Hove, Marleen, Decoutere, Stefaan

Year:

2012

Language:

english

File:

PDF, 440 KB

english, 2012

21

Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2- $\mu\hbox{m}$ Buffer Thickness by Local Substrate Removal

Srivastava, Puneet, Das, Jo, Visalli, Domenica, Van Hove, Marleen, Malinowski, Pawel E., Marcon, Denis, Lenci, Silvia, Geens, Karen, Cheng, Kai, Leys, Maarten, Decoutere, Stefaan, Mertens, Robert P.,

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 312 KB

english, 2011

22

A New Ultra-Low K ILD Material Based On Organic-Inorganic Hybrid Resins

Zhong, Ben, Meynen, Herman, Iocopi, Francesca, Weidner, Ken, Mailhouitre, Stephane, Moyer, Eric, Bargeron, Cory, Schalk, Paul, Peck, Alan, Hove, Marleen Van, Maex, Karen

Journal:

MRS Proceedings

Year:

2002

Language:

english

File:

PDF, 574 KB

english, 2002

23

[IEEE 2010 IEEE International Reliability Physics Symposium - Garden Grove (Anaheim), CA, USA (2010.05.2-2010.05.6)] 2010 IEEE International Reliability Physics Symposium - High temperature on- and off-state stress of GaN-on-Si HEMTs with in-situ Si3N4 cap layer

Marcon, Denis, Medjdoub, Farid, Visalli, Domenica, Van Hove, Marleen, Derluyn, Joff, Das, Jo, Degroote, Stefan, Leys, Maarten, Cheng, Kai, Decoutere, Stefaan, Mertens, Robert, Germain, Marianne, Borgh

Year:

2010

Language:

english

File:

PDF, 796 KB

english, 2010

24

Power electronics with wide bandgap materials: Toward greener, more efficient technologies

Iacopi, Francesca, Van Hove, Marleen, Charles, Matthew, Endo, Kazuhiro

Journal:

Year:

2015

Language:

english

File:

PDF, 397 KB

english, 2015

25

Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

Wu, Tian-Li, Marcon, Denis, Ronchi, Nicolo, Bakeroot, Benoit, You, Shuzhen, Stoffels, Steve, Van Hove, Marleen, Bisi, Davide, Meneghini, Matteo, Groeseneken, Guido, Decoutere, Stefaan

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 839 KB

english, 2015

26

AlN/AlGaN/GaN buffer optimization on silicon (111): bow and crystal quality control for Si-CMOS fabs

Kandaswamy, Prem Kumar, Liang, Hu, Zhao, Ming, Yoga, Saripalli, Carlson, Eric Porter, Thapa, Sarad Bahadur, Hove, Marleen Van, Richard, Olivier, DeVos, Brecht, Vancoille, Eric, Dutta, Barun

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 1.55 MB

english, 2014

27

Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal

Visalli, Domenica, Van Hove, Marleen, Srivastava, Puneet, Derluyn, Joff, Das, Johan, Leys, Maarten, Degroote, Stefan, Cheng, Kai, Germain, Marianne, Borghs, Gustaaf

Journal:

Applied Physics Letters

Year:

2010

Language:

english

File:

PDF, 296 KB

english, 2010

28

200 V Enhancement-mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI with Trench Isolation for Monolithic Integration

Li, Xiangdong, Van Hove, Marleen, Zhao, Ming, Geens, Karen, Lempinen, Vesa-Pekka, Sormunen, Jaakko, Groeseneken, Guido, Decoutere, Stefaan

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 920 KB

english, 2017

29

Fast beam collinear laser-rf double resonance

Marleen E. Van Hove, Roger E. Silverans

Journal:

Hyperfine Interactions

Year:

1987

Language:

english

File:

PDF, 942 KB

english, 1987

30

Suppression of the Backgating Effect of Enhancement-mode p-GaN HEMTs on 200 mm GaN-on-SOI for Monolithic Integration

Li, Xiangdong, Van Hove, Marleen, Zhao, Ming, Geens, Karen, Guo, Weiming, You, Shuzhen, Stoffels, Steve, Lempinen, Vesa-Pekka, Sormunen, Jaakko, Groeseneken, Guido, Groeseneken, Stefaan

Journal:

IEEE Electron Device Letters

Year:

2018

Language:

english

File:

PDF, 577 KB

english, 2018

31

Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis

Rossetto, Isabella, Meneghini, Matteo, Rizzato, Vanessa, Ruzzarin, Maria, Favaron, Andrea, Stoffels, Steve, Van Hove, Marleen, Posthuma, Niels, Wu, Tian-Li, Marcon, Denis, Decoutere, Stefaan, Meneghes

Journal:

Microelectronics Reliability

Year:

2016

Language:

english

File:

PDF, 1.75 MB

english, 2016

32

AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility

Cheng, Kai, Liang, Hu, Hove, Marleen Van, Geens, Karen, Jaeger, Brice De, Srivastava, Puneet, Kang, Xuanwu, Favia, Paola, Bender, Hugo, Decoutere, Stefaan, Dekoster, Johan, Borniquel, Jose Ignacio del

Journal:

Applied Physics Express

Year:

2012

Language:

english

File:

PDF, 1.96 MB

english, 2012

33

[IEEE 2016 IEEE International Reliability Physics Symposium (IRPS) - Pasadena, CA, USA (2016.4.17-2016.4.21)] 2016 IEEE International Reliability Physics Symposium (IRPS) - Positive bias temperature instability evaluation in fully recessed gate GaN MIS-FETs

Wu, Tian-Li, Franco, Jacopo, Marcon, Denis, De Jaeger, Brice, Bakeroot, Benoit, Kang, Xuanwu, Stoffels, Steve, Van Hove, Marleen, Groeseneken, Guido, Decoutere, Stefaan

Year:

2016

Language:

english

File:

PDF, 480 KB

english, 2016

34

Stability Evaluation of Insulated Gate AlGaN/GaN Power Switching Devices Under Heavy-Ion Irradiation

Stoffels, Steve, Melotte, Michel, Haussy, Magali, Venegas, Rafael, Marcon, Denis, Van Hove, Marleen, Decoutere, Stefaan

Journal:

IEEE Transactions on Nuclear Science

Year:

2013

Language:

english

File:

PDF, 1.97 MB

english, 2013

35

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Wu, Tian-Li, Marcon, Denis, Bakeroot, Benoit, De Jaeger, Brice, Lin, H. C., Franco, Jacopo, Stoffels, Steve, Van Hove, Marleen, Roelofs, Robin, Groeseneken, Guido, Decoutere, Stefaan

Journal:

Applied Physics Letters

Year:

2015

Language:

english

File:

PDF, 1.15 MB

english, 2015

36

[IEEE 2015 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2015.4.19-2015.4.23)] 2015 IEEE International Reliability Physics Symposium - Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs

Wu, Tian-Li, Marcon, Denis, De Jaeger, Brice, Van Hove, Marleen, Bakeroot, Benoit, Stoffels, Steve, Groeseneken, Guido, Decoutere, Stefaan, Roelofs, Robin

Year:

2015

Language:

english

File:

PDF, 568 KB

english, 2015

37

SPIE Proceedings [SPIE Semiconductors '92 - Somerset, NJ (Sunday 22 March 1992)] Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication - Zero-dimensional states in nanostructures constricted by double-barrier heterojunctions and H-isolation

Van Hove, Marleen, Malik, Roger J., Palmstrom, Chris J., Bedair, Salah M., Craighead, Harold G., Kubena, Randall L.

Year:

1992

Language:

english

File:

PDF, 296 KB

english, 1992

38

ECS Transactions [ECS 220th ECS Meeting - Boston, MA (October 9 - October 14, 2011)] - (Invited) GaN-on-Si For High-Voltage Applications

Visalli, Domenica, Van Hove, Marleen, Srivastava, Puneet, Marcon, Denis, Geens, Karen, Kang, Xuanwu, Vandenplas, Erwin, Viaene, John, Leys, Maarten, Cheng, Kai, Sijmus, Bram, Decoutere, Stefaan, Borgh

Year:

2011

Language:

english

File:

PDF, 437 KB

english, 2011

39

[ASME ASME 2006 International Mechanical Engineering Congress and Exposition - Chicago, Illinois, USA (November 5 – 10, 2006)] Applied Mechanics - Use of Nanoindentation to Characterise the Plasma Damage Region in Low-k Dielectric Films

Molina-Aldareguia, Jon M., Elizalde, Maria R., Ocaña, Ibon, Gil-Sevillano, Javier, Martínez-Esnaola, José M., Iacopi, Francesca, Travaly, Youssef, Van Hove, Marleen

Year:

2006

Language:

english

File:

PDF, 473 KB

english, 2006

40

[IEEE 2015 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2015.12.7-2015.12.9)] 2015 IEEE International Electron Devices Meeting (IEDM) - Suspended AlGaN/GaN membrane devices with recessed open gate areas for ultra-low-power air quality monitoring

Offermans, Peter, Si-Ali, Ahmed, Brom-Verheyden, Greja, Geens, Karen, Lenci, Silvia, Van Hove, Marleen, Decoutere, Stefaan, Van Schaijk, Rob

Year:

2015

Language:

english

File:

PDF, 471 KB

english, 2015

41

Investigation on Carrier Transport Through AlN Nucleation Layer From Differently Doped Si(111) Substrates

Li, Xiangdong, Van Hove, Marleen, Zhao, Ming, Bakeroot, Benoit, You, Shuzhen, Groeseneken, Guido, Decoutere, Stefaan

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 2.17 MB

english, 2018

42

Phase Effects in Bichromatic Field Interactions with a Two-Level Atom

Silverans, Roger E., Borghs, Gustaaf, De Bisschop, Peter, Van Hove, Marleen

Journal:

Physical Review Letters

Year:

1985

Language:

english

File:

PDF, 672 KB

english, 1985

43

Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate

Bisi, Davide, Meneghini, Matteo, Van Hove, Marleen, Marcon, Denis, Stoffels, Steve, Wu, Tian-Li, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico

Journal:

physica status solidi (a)

Year:

2015

Language:

english

File:

PDF, 1.88 MB

english, 2015

44

Herstel van whiplash volgens de patiÃ«nt: bijdrage van kwalitatief onderzoek

Hoving, Jan, van Son, Marleen, Zemouri, Charifa, Frings-Dresen, Monique, Hulshof, Carel

Journal:

Tijdschrift voor Bedrijfs- en Verzekeringsgeneeskunde

Year:

2020

File:

PDF, 196 KB

2020

45

High breakdown voltage in AlGaN/GaN/AlGaN double heterostructures grown on 4 inch Si substrates

Domenica Visalli, Marleen Van Hove, Joff Derluyn, Kai Cheng, Stefan Degroote, Maarten Leys, Marianne Germain, Gustaaf Borghs

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 351 KB

english, 2009

46

On a More Accurate Assessment of Scaled Copper/Low-k Interconnects Performance

Travaly, Youssef, Mandeep, Bamal, Carbonell, Laureen, Tokei, Zsolt, Van Olmen, Jan, Iac, Francesca, Van Hove, Marleen, Stucchi, Michele, Maex, Karen

Journal:

IEEE Transactions on Semiconductor Manufacturing

Year:

2007

Language:

english

File:

PDF, 1.59 MB

english, 2007

47

Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate

Meneghesso, Gaudenzio, Meneghini, Matteo, Bisi, Davide, Rossetto, Isabella, Wu, Tian-Li, Van Hove, Marleen, Marcon, Denis, Stoffels, Steve, Decoutere, Stefaan, Zanoni, Enrico

Journal:

Microelectronics Reliability

Year:

2015

Language:

english

File:

PDF, 2.40 MB

english, 2015

48

AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance

Visalli, Domenica, Van Hove, Marleen, Derluyn, Joff, Degroote, Stefan, Leys, Maarten, Cheng, Kai, Germain, Marianne, Borghs, Gustaaf

Journal:

Japanese Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 239 KB

english, 2009

49

Electrically active defects at AlN/Si interface studied by DLTS and ESR

Eddy Simoen, Domenica Visalli, Marleen Van Hove, Maarten Leys, Paola Favia, Hugo Bender, Gustaaf Borghs, Ahn Puc Duc Nguyen, Andre Stesmans

Journal:

physica status solidi (a)

Year:

2012

Language:

english

File:

PDF, 726 KB

english, 2012

50

Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs

Borga, Matteo, Meneghini, Matteo, Rossetto, Isabella, Stoffels, Steve, Posthuma, Niels, Van Hove, Marleen, Marcon, Denis, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 2.08 MB

english, 2017

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